2SJ517 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
производитель
2SJ517 Datasheet PDF : 8 Pages
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2SJ517
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
–0.4
I D = –2 A
–0.2
–1 A
–0.5 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
VGS = –2.5 V
0.2
–4 V
0.1
0.05
0.02
Pulse Test
0.01
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
I D = –2 A
0.4
0.3 VGS = –2.5 V
–1 A
–0.5 A
0.2
–4 V
0.1
–0.5, –1, –2 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25 °C
2
75 °C
1
25 °C
0.5
0.2
V DS = –10 V
Pulse Test
0.1
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
4
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