2SJ517 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

2SJ517

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

2SJ517

Power vs. Temperature Derating

2.0

Test Condition :

When using the aliminium Ceramic

board (12.5 x 20 x 70 mm)

1.5

1.0

0.5

0

50

100

150

200

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

–10

–3

10 µs

–1

DC

–0.3

–0.1

Operation in

this area is

Operation

limited by R DS(on)

–0.03

–0.01 Ta = 25 °C

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–5

–10 V

Pulse Test

–4 V

–4

–3 V

–2.5 V

–3

–2

–2 V

–1

VGS = –1.5 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–5

–4

–25°C

–3

25°C

Tc = 75°C

–2

–1

V DS = –10 V

Pulse Test

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

Share Link: