2SJ517 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ517 Datasheet PDF : 8 Pages
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2SJ517
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
–20
Gate to source voltage
VGSS
±10
Drain current
ID
–2
Drain peak current
I Note1
D(pulse)
–4
Body-drain diode reverse drain current IDR
–2
Channel dissipation
Pch Note2
1
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 100µs, duty cycle ≤ 10 %
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Zero gate voltege drain current IDSS
Gate to source leak current
I GSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
resistance
RDS(on)
–20
±10
—
—
–0.5
—
Static drain to source on state
resistance
RDS(on)
—
Forward transfer admittance
Input capacitance
|yfs|
1.8
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 3. Pulse test
4. Marking is “YY”.
Typ Max
—
—
—
—
—
–10
—
±10
—
–1.5
0.18 0.24
0.27 0.43
3.0 —
320 —
190 —
90
—
14
—
75
—
90
—
90
—
–0.95 —
70
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –20 V, VGS = 0
VGS = ±8V, VDS = 0
ID = –1mA, VDS = –10V
ID = –1A, VGS = –4VNote3
ID = –1A, VGS = –2.5V Note3
ID = –1A, VDS = –10V Note3
VDS = –10V
VGS = 0
f = 1MHz
ID = –1A, RL = 10Ω
VGS = –4V
IF = –2A, VGS = 0
IF = –2A, VGS = 0
diF/ dt =50A/µs
2
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