2SJ517 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ517 Datasheet PDF : 8 Pages
| |||
2SJ517
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.18 Ω typ. (at VGS =–4V, ID =–1A)
• Low drive current
• High speed switching
• 2.5V gate drive devices.
Outline
UPAK
ADE-208-575B (Z)
3rd. Edition
Jun 1998
1
2
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain
Share Link: 