2SJ506 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SJ506

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ506(L), 2SJ506(S)

Body to Drain Diode Reverse

Recovery Time

100

50

20

10

–0.1 –0.2

–0.5

di / dt = 50 A / µs

VGS = 0, Ta = 25 °C

–1 –2 –5 –10 –20

Reverse Drain Current I DR (A)

5000

2000

1000

500

200

100

50

Typical Capacitance vs.

Drain to Source Voltage

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

20

10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V DS (V)

Dynamic Input Characteristics

0

0

VDD = –5 V

–10 V

V DS

–10

–25 V

–4

–20

V DD = –25 V

–10 V

–30

–5 V

V GS

–40

–50 ID = –10 A

0

8

16

Gate Charge

24 32

Qg (nc)

–8

–12

–16

–20

40

1000

500

Switching Characteristics

V GS = –10 V, V DD = –10 V

PW = 10 µs, duty <= 1 %

200

100

t d(off)

50

tf

tr

20

t d(on)

10

5

–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50

Drain Current I D (A)

6

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