2SJ506 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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Компоненты Описание
производитель
2SJ506 Datasheet PDF : 10 Pages
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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2
Pulse Test
–1.6
–1.2
–0.8
ID = –10 A
–0.4
–5 A
–2 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
2SJ506(L), 2SJ506(S)
Static Drain to Source on State Resistance
1000
vs. Drain Current
500
200
VGS = –4 V
100
50
–10 V
20
10
–1 –2
Pulse Test
–5 –10 –20 –50 –100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
–5 A
I D = –10 A
160
VGS = –4 V
120
–2 A
–10 A
80
40
VGS = –10 V
–2,–5 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
100
Drain Current
50
20
Tc = –25 °C
10
5
25 °C
2
75 °C
1
0.5
–0.1–0.2 –0.5 –1 –2
V DS = –10 V
Pulse Test
–5 –10 –20 –50
Drain Current I D (A)
5
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