2SJ506 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
2SJ506 Datasheet PDF : 10 Pages
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Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Zero gate voltege drain
I DSS
current
Gate to source leak current IGSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note: 3. Pulse test
Min
–30
±20
—
—
–1.0
—
—
10
—
—
—
—
—
—
—
—
—
Typ Max
—
—
—
—
—
–10
—
±10
—
–2.0
65
85
110 180
16
—
660 —
440 —
140 —
12
—
65
—
85
—
65
—
–1.05 —
65
—
2SJ506(L), 2SJ506(S)
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –30 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –5A, VGS = –10VNote3
ID = –5A, VGS = –4V Note3
ID = –5A, VDS = –10V Note3
VDS = –10V
VGS = 0
f = 1MHz
ID = –5A, RL = 2Ω
VGS = –10V
IF = –10A, VGS = 0
IF = –10A, VGS = 0
diF/ dt = 50A/µs
3
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