2SJ506 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ506 Datasheet PDF : 10 Pages
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2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
• Low on-resistance
RDS(on) = 0.065 Ω typ. (at VGS = –10V, ID = –5A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
DPAK–2
D
G
S
4
4
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
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