2SJ505 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ505

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

–100

–80

–60

–40

–20

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

–5 V

–10 V

VGS = 0

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V SD (V)

2SJ505(L), 2SJ505(S)

Maximun Avalanche Energy vs.

Channel Temperature Derating

250

I AP = –50 A

200

V DD = –25 V

duty < 0.1 %

Rg > 50 Ω

150

100

50

0

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin

–15 V

V DS

Monitor

Rg

50 Ω

Avalanche Test Circuit and Waveform

L

EAR =

1

2

• L • I AP2•

VDSS

VDSS – V DD

I AP

Monitor

D. U. T

VDD

I AP

ID

V(BR)DSS

VDS

VDD

0

7

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