2SJ505 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ505

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ505(L), 2SJ505(S)

1000

500

Body to Drain Diode Reverse

Recovery Time

200

100

50

20

10

–0.1 –0.3

di / dt = 50 A / µs

VGS = 0, Ta = 25 °C

–1 –3 –10 –30 –100

Reverse Drain Current I DR (A)

50000

20000

10000

5000

2000

1000

500

Typical Capacitance vs.

Drain to Source Voltage

VGS = 0

f = 1 MHz

Ciss

Coss

200

100

0

Crss

–10 –20 –30

Drain to Source Voltage

–40

V DS

–50

(V)

Dynamic Input Characteristics

0

0

V DD = –50 V

–25 V

–20

–10 V

–4

ID = –50 A

V DS

–40

–8

V GS

–60

–12

–80

–100

0

V DD = –50 V

–25 V

–10 V

40 80 120 160

Gate Charge Qg (nc)

–16

–20

200

1000

500

200

100

Switching Characteristics

t d(off)

tf

tr

50

t d(on)

20

10

–0.1 –0.3

V GS = –10 V, V DD = –30 V

PW = 10 µs, duty <= 1 %

–1 –3 –10 –30 –100

Drain Current I D (A)

6

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