2SJ505 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ505 Datasheet PDF : 10 Pages
| |||
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2
Pulse Test
–1.6
–1.2
ID = –50 A
–0.8
–0.4
–5 A
–20 A
–10 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
2SJ505(L), 2SJ505(S)
Static Drain to Source on State Resistance
vs. Drain Current
100
50
VGS = –4 V
20
10
–10 V
5
2
Pulse Test
1
–1 –3 –10 –30 –100 –300 –1000
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
I D = –50 A
–20 A
VGS = –4 V
30
–50 A
–10 A
20
–10,–20A
10
VGS = –10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
100
Drain Current
30
Tc = –25 °C
25 °C
10
3
75 °C
1
0.3
V DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I D (A)
5
Share Link: 