2SJ505 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ505

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ505(L), 2SJ505(S)

Main Characteristics

Power vs. Temperature Derating

80

60

40

20

0

50

100

150

200

Case Temperature Tc (°C)

Maximum Safe Operation Area

–1000

–300

–100

–30

–10

–3

–1

DC

PW

Opera=tio1n0

Operation in

this area is

limited by R DS(on)

ms

(Tc

11m0s01µ0sµs

(1 shot)

= 25 °C)

–0.3

–0.1 Ta = 25 °C

–0.1 –0.3 –1

–3 –10 –30 –100

Drain to Source Voltage V DS (V)

–10 V

–100

–80

Typical Output Characteristics

–4.5 V

–5 V

–8 V

Pulse Test

–4 V

–60

–3.5 V

–40

–3 V

–20

VGS = –2.5 V

0

–4 –8 –12 –16 –20

Drain to Source Voltage V DS (V)

–100

–80

Typical Transfer Characteristics

V DS = –10 V

Pulse Test

25 °C

–60

–40

–20

75 °C

Tc = –25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

4

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