2SJ505 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SJ505

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ505(L), 2SJ505(S)

Silicon P Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.017Ω typ.

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

LDPAK

D

G

S

ADE-208-547

Target specification 1st. Edition

4

4

1

2

3

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

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