2SJ504 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ504

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ504

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

0

50

100

150

200

Case Temperature Tc (°C)

–1000

Maximum Safe Operation Area

–300

–100

–30

–10

–3

–1

–0.3

10 µs

OtlihmpisietearadretiboaynisRinDDSC(oOnp)ePraWtio=n1(0Tcm=1s12m(0150ss°Cµho)st)

–0.1 Ta = 25 °C

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–50 –10 V

–4.5 V

–8 V

–40

–30

–6 V

–5 V

Pulse Test

–4 V

–3.5 V

–20

–3 V

–10

VGS = –2.5 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–50

V DS = –10 V Tc = –25 °C

Pulse Test

–40

25 °C

–30

–20

–10

75 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

4

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