2SJ504 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SJ504

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Drain to source breakdown

voltage

V(BR)DSS

Gate to source breakdown

voltage

V(BR)GSS

Zero gate voltege drain

I DSS

current

Gate to source leak current IGSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

RDS(on)

Forward transfer admittance |yfs|

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note: 1. Pulse test

Min

–60

±20

—

—

–1.0

—

—

10

—

—

—

—

—

—

—

—

—

Typ Max Unit

—

—

V

—

—

V

—

–10

µA

—

±10

µA

—

–2.0 V

0.042 0.055 Ω

0.065 0.095 Ω

16

—

S

1750 —

pF

800 —

pF

180 —

pF

16

—

ns

100 —

ns

230 —

ns

140 —

ns

–1.0 —

V

100 —

ns

2SJ504

Test Conditions

ID = –10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = –60 V, VGS = 0

VGS = ±16V, VDS = 0

ID = –1mA, VDS = –10V

ID = –10A, VGS = –10V*1

ID = –10A, VGS = –4V*1

ID = 10A, VDS = 10V*1

VDS = –10V

VGS = 0

f = 1MHz

VGS = –10V, ID = –10A

RL = 3Ω

IF = –20A, VGS = 0

IF = –20A, VGS = 0

diF/ dt = 50A/µs

3

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