2SJ486 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ486 Datasheet PDF : 8 Pages
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2SJ486
Silicon P Channel MOS FET
Low FrequencyPower Switching
Features
• Low on-resistance
RDS(on) = 0.5 Ω typ. (at VGS = –4V, ID = –100 mA)
• 2.5V gate drive devices.
• Small package (MPAK).
Outline
MPAK
3
D
G
S
1
2
1. Source
2. Gate
3. Drain
ADE-208-512 A
2nd. Edition
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