2SJ636 Просмотр технического описания (PDF) - SANYO -> Panasonic
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производитель
2SJ636 Datasheet PDF : 4 Pages
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2SJ636
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0
VDS=--100V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
ID=--1.5A, VGS=--10V
ID=--1.5A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--3A
VDS=--50V, VGS=--10V, ID=--3A
VDS=--50V, VGS=--10V, ID=--3A
IS=--3A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
PW=10µs
D.C.≤1%
VIN
G
VDD= --50V
ID= --1.5A
RL=33.3Ω
D
VOUT
P.G
50Ω
2SJ636
S
Ratings
Unit
--100
V
±20
V
--3
A
--12
A
1
W
15
W
150
°C
--55 to +150
°C
min
--100
Ratings
typ
--1.2
1.5
3
415
535
535
43
31
9
15
56
35
11
2.6
2
--0.9
Unit
max
V
--1 µA
±10 µA
--2.6
V
S
535 mΩ
735 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2
V
No.7496-2/4
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