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Номер в каталоге
Компоненты Описание
2SJ567(TE16L1,NQ) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SJ567(TE16L1,NQ)
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
Toshiba
2SJ567(TE16L1,NQ) Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SJ567
r
th
– t
w
3
1
Duty
=
0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.02
0.03
Single pulse
0.01
0.005
0.003
0.01
0.001
10
μ
100
μ
1m
10 m
100 m
Pulse width t
w
(S)
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
6.25°C/W
1
10
100
Safe operating area
−
30
ID max (pulse)
*
−
10
−
5
−
3
1 ms
*
100
μ
s
*
−
1
−
0.5
−
0.3
DC
operation
−
0.1
−
0.05
*
Single nonrepetitive pulse
−
0.03 Tc
=
25°C
Curves must be derated
−
0.01
linearly with increase in
temperature.
−
0.005
−
0.1
−
0.3
−
1
−
3
−
10
VDSS max
−
30
−
100
−
300
Drain-source voltage V
DS
(V)
E
AS
– T
ch
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature Tch (°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
= −
50 V, L
=
25.2 mH
Waveform
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2010-02-05
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