2SJ351 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ351 Datasheet PDF : 6 Pages
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2SJ351, 2SJ352
Absolute Maximum Ratings
Item
Drain to source voltage
2SJ351
2SJ352
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Symbol
VDSX
VGSS
ID
IDR
Pch Note 1
Tch
Tstg
Value
–180
–200
±20
–8
–8
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown
voltage
2SJ351
2SJ352
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse test
Symbol
V (BR) DSX
V (BR) GSS
VGS (off)
VDS (sat)
|yfs|
Ciss
Coss
Crss
ton
toff
Min
–180
–200
±20
–0.15
—
0.7
—
—
—
—
—
Typ
—
—
—
—
—
1.0
800
1000
18
320
120
Max
—
—
—
–1.45
–12
1.4
—
—
—
—
—
Unit
V
V
V
V
V
S
pF
pF
pF
ns
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 10 V
IG = ±100 µA, VDS = 0
ID = –100 mA, VDS = –10 V
ID = –8 A, VGS = 0 Note 2
ID = –3 A, VDS = –10 V Note 2
VGS = 5 V, VDS = –10 V,
f = 1 MHz
VDD = –30 V ID = –4 A
Rev.2.00 Sep 07, 2005 page 2 of 5
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