2SJ350-E Просмотр технического описания (PDF) - Renesas Electronics
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2SJ350-E Datasheet PDF : 7 Pages
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2SJ350
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
ID = –3 A
–2 A
1.2
–1 A
VGS = –4 V
0.8
0.4
–10 V
–3 A
–1 A, –2 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
–0.1 –0.2
di / dt = 50 A / µs, VGS = 0
Ta = 25°C, Pulse Test
–0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –25 V
–50 V
–40
–80 V
ID = –6 A –4
–80
VDS
–120
–8
VDD = –25 V
–50 V
–80 V
–12
VGS
–160
–16
–200
0
20 40 60 80
Gate Charge Qg (nc)
–20
100
Forward Transfer Admittance vs.
Drain Current
50
VDS = –10 V
Pulse Test
20
10
Tc = –25°C
5
2
25°C
75°C
1
0.5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current ID (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
200
100
50
Ciss
Coss
Crss
20 VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
200
td(off)
100
tf
50
20
tr
td(on)
10
5
–0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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