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Компоненты Описание
2SJ387L Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ387L
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
2SJ387L Datasheet PDF : 10 Pages
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2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
•
Low on-resistance
•
Low drive current
•
2.5 V Gate drive device can be driven from 3 V Source
•
Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
123
D
12
3
1. Gate
G
2. Drain
3. Source
4. Drain
S
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