2SJ386 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SJ386 Datasheet PDF : 7 Pages
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2SJ386
1000
500
Typical Capacitance vs.
Drain to Source Voltage
200
Ciss
100
Coss
50
Crss
20
VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
VDD = –30 V
–10
–20 V
–10 V
I D = –3 A
–4
–20
–30 V DS
–40
VDD = –30 V
–20 V
–10 V
V GS
–50
0
4
8
12 16
Gate Charge Qg (nc)
–8
–12
–16
–20
20
Switching Characteristics
200
100
tf
50
t d(off)
20
tr
10
t d(on)
5
V GS = –10 V, V DD = –30 V
PW = 2 µs, duty < 1 %
2
–0.05 –0.1 –0.2 –0.5 –1 –2
–5
Drain Current I D (A)
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
–4
–3
–10 V
–2 –5 V
–1
VGS = 0
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V SD (V)
5
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