2SJ386 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

2SJ386

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

Maximum Channel Dissipation Curve

1.6

1.2

0.8

0.4

0

50

100

150

200

Ambient Temperature Ta (°C)

2SJ386

Maximum Safe Operation Area

–10

100 µs

–3

1 ms

–1

–0.3

–0.1

Operation in

this area is

limited by RDS(on)

–0.03

Ta = 25 °C

–0.01 1 shot pulse

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–2.0

–5 V

–4 V

–1.6 –3.5 V

–3 V

Ta = 25 °C

Pulse Test

–1.2

–2.5 V

–0.8

–0.4

VGS = –2 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–5

V DS = –10 V

Pulse Test

–4

Ta = –25 °C

–3

25 °C

75 °C

–2

–1

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

Share Link: