2SJ386 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SJ386

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ386

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch

Tch

Tstg

Ratings

Unit

–30

V

±20

V

–3

A

–5

A

–3

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

–30

Gate to source breakdown

voltage

V(BR)GSS

±20

Gate to source leak current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

–1.0

—

—

Typ

—

—

—

—

—

0.3

0.55

Forward transfer admittance |yfs|

1.0 1.7

Input capacitance

Ciss

—

177

Output capacitance

Coss —

120

Reverse transfer capacitance Crss

—

59

Turn-on delay time

Rise time

Turn-off delay time

Fall time

t d(on)

tr

t d(off)

tf

—

8

—

28

—

45

—

60

Max

—

—

±10

–10

–2.5

0.4

0.8

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

Test conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = –24 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –2 A

VGS = –10 V*1

ID = –2 A

VGS = –4 V*1

ID = –1 A

VDS = –10 V*1

VDS = –10 V

VGS = 0

f = 1 MHz

ID = –2 A

VGS = –10 V

RL = 15 Ω

2

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