2SJ351 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ351

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ351, 2SJ352

Electrical Characteristics (Ta = 25°C)

Item

Drain to source

2SJ351

breakdown voltage 2SJ352

Gate to source breakdown

voltage

Gate to source cutoff voltage

Drain to source saturation

voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Note: 1. Pulse test

Symbol Min

V(BR)DSX

–180

–200

V(BR)GSS ±20

VGS(off)

VDS(sat)

–0.15

—

|yfs|

0.7

Ciss —

Coss —

Crss —

t on

—

t off

—

Typ

—

—

—

—

—

1.0

800

1000

18

320

120

Max Unit

—

V

—

—

V

–1.45 V

–12 V

1.4

S

—

pF

—

pF

—

pF

—

ns

—

ns

Test conditions

ID = –10 mA, VGS = 10 V

IG = ±100 µA, VDS = 0

ID = –100 mA, VDS = –10 V

ID = –8 A, VGD = 0*1

ID = –3 A, VDS = –10 V*1

VGS = 5 V, VDS = –10 V,

f = 1 MHz

VDD = –30 V, ID = –4 A

3

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