2SJ319S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ319S

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

Power vs. Temperature Derating

20

15

10

5

0

50

100

150

200

Case Temperature Tc (°C)

2SJ319(L), 2SJ319(S)

Maximum Safe Operation Area

–50

–30

–10

–3

–1

–0.3

–0.1

–0.05

PW

DC Oper=ati1o0n

Operation in

this area is

limited by RDS(on)

1

1001µ0sµs

ms

ms

(Tc

=(12s5h°oCt))

Ta = 25 °C

–1 –3 –10 –30 –100 –300 –500

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–5

–10 V –8 V

–6 V

–4 Pulse Test

–3

–5 V

–2

–1

–4 V

VGS = –3.5 V

0

–4 –8 –12 –16 –20

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–5

Tc = –25 °C

25 °C

–4

75 °C

–3

–2

–1

V DS = –10 V

Pulse Test

0

–2 –4 –6 –8 –10

Gate to Source Voltage V GS (V)

3

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