2SJ319(L), 2SJ319(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
–200
V
±20
V
–3
A
–12
A
–3
A
20
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –200
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
–2.0
—
Forward transfer admittance |yfs|
1.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note: 1. Pulse test
Typ Max
—
—
—
—
—
±10
—
–100
—
–4.0
1.7
2.3
1.7
—
330 —
130 —
25
—
10
—
30
—
40
—
30
—
–1.15 —
180 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –160 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –2 A, VGS = –10 V*1
ID = –2 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –2 A, VGS = –10 V,
RL = 15
IF = –3 A, VGS = 0
IF = –3 A, VGS = 0,
diF/dt = 50 A/µs
2