2SJ246 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ246 Datasheet PDF : 7 Pages
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2SJ246 L , 2SJ246 S
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–2.0
Pulse test
–1.6
–1.2
–0.8
–0.4
–1 A
I D= –5 A
–2 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse test
2
1
0.5
0.2
0.1
0.05
–0.1
VGS = –4 V
–10 V
–1
–10
Drain Current I D (A)
–100
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse test
0.4
0.3
VGS = –4 V
0.2
–10 V
0.1
I D= –5 A
–2 A
–1 A
–5 A
–1 A, –2 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
Pusle test
VDS = –10 V
5
–25°C
2
Tc = 25°C
75°C
1
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
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