2SJ246S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ246S

SILICON P-CHANNEL MOS FET

Hitachi -> Renesas Electronics 

2SJ246 L , 2SJ246 S

Power vs. Temperature Derating

40

30

20

10

0

50

100

150

200

Case Temperature Tc (°C)

Maximum Safe Operation Area

–50

–30

10µs

100µs

–10

–3

–1

Operation

in

this

PW

DC Operat=io1n0(mTcs

area is

1 ms

(1 shot)

= 25°C)

limited by R DS(on)

–0.3

Ta = 25°C

–0.1

–0.3

–1

–3

–10 –30 –50

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–10

–5 V

–4 V

–6 V

–8

Pulse test

–10V

–6

–3.5 V

–4

–3 V

–2

VGS = –2.5 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–10

Tc = –25°C

–8

Pulse test

VDS = –10 V

–6

25°C

75°C

–4

–2

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

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