2SJ315 Просмотр технического описания (PDF) - Toshiba
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2SJ315 Datasheet PDF : 3 Pages
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2SJ315
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ315
DC−DC Converter
FEATURES
l 4− Volt gate drive
l Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.)
l High forward transfer admittance : |Yfs| = 3.0 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = −60 V)
l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
Pulse(Note 1)
IDP
−5
A
−20
Drain power dissipation (Tc = 25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
6.25
°C / W
125
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B3B
Weight: 0.36 g (typ.)
1
2002-06-27
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