2SJ313(2006) Просмотр технического описания (PDF) - Toshiba

Номер в каталоге

Компоненты Описание

производитель

2SJ313
(Rev.:2006)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain−source breakdown voltage

Gate−source cut−off voltage (Note 2)

Drain−source saturation voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

IGSS

V (BR) DSS

VGS (OFF)

VDS (ON)

|Yfs|

Ciss

Coss

Crss

VDS = 0, VGS = ±20 V

ID = −10 mA, VGS = 0

VDS = −10 V, ID = −10 mA

ID = −0.6 A, VGS = −10 V

VDS = −10 V, ID = −0.3 A

VDS = −10 V, VGS = 0, f = 1 MHz

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VGS (OFF) Classification

O: −0.8~−1.6, Y: −1.4~−2.8

This transistor is the electrostatic-sensitive device.

Please handle with caution.

Marking

2SJ313

Min Typ. Max Unit

―

― ±100 nA

−180 ―

―

V

−0.8 ― −2.8

V

― −1.2 −3.0

V

―

0.7

―

S

― 210 ―

―

90

―

pF

―

45

―

J313

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-16

Share Link: