2SD950 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD950 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD950
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=500m A;IC=0
VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.75 A
VBEsat Base-emitter saturation voltage
IC=2 A;IB=0.75 A
ICBO
Collector cut-off current
VCB=750V;IE=0
VCB=1500V;IE=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=10V
VF
Diode forward voltage
IF=4A
tf
Fall time
ts
Storage time
IC=2A;IBend=0.75A;LB=10μH
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
50 μA
1.0 mA
8
3
1.7
V
0.9 μs
11
μs
2
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