2SD946(2001) Просмотр технического описания (PDF) - Panasonic Corporation
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2SD946 Datasheet PDF : 3 Pages
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Power Transistors
2SD0946, 2SD0946A, 2SD0946B
(2SD946, 2SD946A, 2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
8.0+–00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
I Features
• Forward current transfer ratio hFE is designed high, which is
appropriate to the driver circuit of motors and printer hammer
• A shunt resistor is omitted from the driver
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base 2SD0946
VCBO
30
V
voltage
2SD0946A
60
2SD0946B
100
Collector to
2SD0946
VCEO
25
V
emitter voltage 2SD0946A
50
2SD0946B
80
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current (TC = 25°C)
IC
1
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
Internal Connection
0.5±0.1
1.76±0.1
1: Emitter
2: Collector
3: Base
TO-126B Package
C
B
E
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
2SD0946
2SD0946A
ICBO
IEBO
VCBO
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
IC = 100 µA, IE = 0
100 nA
100 nA
30
V
60
2SD0946B
100
Collector to emitter 2SD0946
VCEO
IC = 1 mA, IB = 0
25
V
voltage
2SD0946A
50
2SD0946B
80
Emitter to base voltage
Forward current transfer ratio *
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
VEBO
hFE
VCE(sat)
VBE(sat)
fT
IE = 100 µA, IC = 0
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
5
4 000
40 000
1.8
2.2
150
V
V
V
MHz
Note) *: Rank classification
Rank
hFE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note.) The Part numbers in the Parenthesis show conventional
part number.
1
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