2SD874 Просмотр технического описания (PDF) - Willas Electronic Corp.

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2SD874

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

SOT-89 Plastic-Encapsulate Transistors

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

2SD874 THRU

FM1200-M+

Pb Free Product

Features

• Batch process design, excellent power dissipation offers

Package outline

better reverse leakage current and thermal resistance.

O u t l i n e D r a w i n g • Low profile surface mounted application in order to

optimize board space.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

SOD-123H

S O T- 8 9 0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

0.071(1.8)

0.056(1.4)

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Mechanical data .181(4.60)

0.040(1.0)

• Epoxy : UL94-V0 rated flame retardant

.173(4.39)

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Method 2026

y .061REF

• Polarity : Indicated by cathode band

r (1.55)REF

• Mounting Position : Any

a • Weight : Approximated 0.011 gram

0.024(0.6)

0.031(0.8) Typ.

.063(1.60)

0.031(0.8) Typ.

.055(1.40)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

in Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

RATINGS

lim M.a1rk6in7g(C4o.d2e5)

M.a1xi5m4um(3R.e9c1ur)rent Peak Reverse Voltage

Maximum RMS Voltage

e Maximum DC Blocking Voltage

r Maximum Average Forward Rectified Current

SYMBOL FM120-MH FM130-MH FM1.410-0MH2F(M21.560-0M)H FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI

12

13

14

15

16

18

10

115 120

VRRM

20

30

4.0091(25.030) 60

80

100

150

200 Volts

VRM.S023(014.58) 21

28

35

42

56

70

105

140 Volts

VDC.016(020.40) 30

40

50

60

80

100

150

200 Volts

IO

1.0

Amp

Peak Forward Surge Current 8.3 ms single half sine-wave

P superimposed.0on4r7at(e1d .lo2a)d (JEDEC method)

IFSM

30

Amp

Typical Ther.m0a3l R1e(s0is.ta8n)ce (Note 2)

RΘJA

40

℃/W

Typical Junction Capacitance (Note 1)

CJ

120

PF

Operating Temperature Range

TJ

-55 to +125

-55 to +150

℃

Storage Temperature Range

.060TYP

CHARACTERIST(I1C.S50)TYP

TSTG

- 65 to +175

℃

.197(0.52)

SYMBOL FM120-MH FM130-M.0H1FM31(400-.M3H2F)M150-MH FM160-MH FM1.800-1M7H (F0M1.41040-)MH FM1150-MH FM1200-MH UNIT

Maximum Forward Voltage at 1.0A DC

.118TYVPF

0.50

0.70

.0104.8(50.35) 0.9

0.92 Volts

Maximum Average Reverse Current at @T A=2(53℃.0)TYIPR

Rated DC Blocking Voltage

@T A=125℃

0.5

mAm

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

2012-06

2012-0

Dimensions in inches and (millimeters)

WILLAS ELECTRROeNv.ICC CORP.

WILLAS ELECTRONIC CORP.

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