2SD849 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SD849

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD849

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0

V(BR)EBO Emitter-base breakdown votage

IE=10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=3 A;IB=1A

VBEsat

Base-emitter saturation voltage

IC=3 A;IB=1A

ICBO

Collector cut-off current

VCB=750V;IE=0

VCB=1500V;IE=0

hFE-1

DC current gain

IC=0.5A ; VCE=5V

hFE-2

tf

ts

DC current gain

Fall time

Storage time

IC=3A ; VCE=10V

IC=3 A;IBend=1A;LB=20µH

MIN TYP. MAX UNIT

600

V

5

V

5.0

V

1.5

V

0.1

mA

1.0

8

4

12

0.9

µs

13

µs

2

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