2SD850 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD850 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD850
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown votage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2.5 A;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=2.5 A;IB=0.8A
ICBO
Collector cut-off current
VCB=750V;IE=0
VCB=1500V;IE=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=2.5A ; VCE=10V
tf
Fall time
ts
Storage time
IC=2.5A;IBend=0.8A;LB=5μH
MIN TYP. MAX UNIT
600
V
5
V
4.0
V
1.5
V
50
μA
1.0
mA
8
4
15
1.0
μs
13
μs
2
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