2SD844 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SD844 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD844
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
50
V
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=4.0A; IB=0.4A
0.4
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=4A ; VCE=1V
VCB=50V; IE=0
VEB=5V; IC=0
1.2
V
10
μA
10
μA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
240
hFE-2
固IN电C半H导AN体GE SEMICONDUTOR fT
COB
DC current gain
Transition frequency
Collector output capacitance
hFE-1 Classifications
O
Y
IC=4A ; VCE=1V
IC=1A ; VCE=5V
f=1MHz ; VCB=10V
30
15
250
MHz
pF
70-140
120-240
2
Share Link: 