2SD844 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD844 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD844
DESCRIPTION
·
·With TO-3P(I) package
·Complement to type 2SB754
·High collector current :IC=7A
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Emitter
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
CONDITIONS
Open emitter
VALUE
50
UNIT
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
7
A
IE
Emitter current
-7
A
PC
Collector power dissipation
Ta=25℃
TC=25℃
2.5
W
60
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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