2SD843 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD843 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD843
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.4A
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
hFE-2
DC Current Gain
IC= 4A; VCE= 1V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 4V
COB
Output Capacitance
Switching times
IE= 0; VCB= 10V; ftest= 1MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
RL= 10Ω, VCC= 30V
IB1= -IB2= 0.3A
hFE-1 Classifications
O
Y
70-140 120-240
MIN TYP. MAX UNIT
80
V
0.5
V
1.4
V
5
μA
5
μA
70
240
30
10
MHz
250
pF
0.4
μs
2.5
μs
0.5
μs
isc Website：www.iscsemi.cn
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