2SD357 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD357

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD357

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·Good Linearity of hFE

·Complement to Type 2SB527

APPLICATIONS

·Designed for AF high power dirver applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

110

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

0.8

A

1

W

10

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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