2SD669XG-X-AA3-R Просмотр технического описания (PDF) - Unisonic Technologies
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2SD669XG-X-AA3-R Datasheet PDF : 4 Pages
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2SD669/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
2SD669
2SD669A
SYMBOL
VCBO
VCEO
RATINGS
180
120
160
UNIT
V
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1.5
A
Collector Peak Current
lC(PEAK)
3
A
SOT-223/ SOT-89
0.5
W
TO-126
1.3
W
Power Dissipation
TO-126C
TO-92/TO-92NL
PD
1
W
0.6
W
TO-251
1
W
TO-252
2
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
HERMAL DATA
Junction to Case
PARAMETER
SOT-89
SOT-223
TO-92/ TO-92NL
TO-126
TO-126C
TO-251/ TO-252
SYMBOL
θJC
RATINGS
38
14
80
6.25
10
4.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown 2SD669
Voltage
2SD669A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test.
SYMBOL TEST CONDITIONS
BVCBO IC=1mA, IE=0
BVCEO IC=10mA, RBE=∞
BVEBO
ICBO
hFE1
hFE2
VCE(SAT)
VBE
fT
Cob
IE=1mA, IC=0
VCB=160V, IE=0
VCE=5V, IC=150mA (Note)
VCE=5V, IC=500mA (Note)
IC=600mA, IB=50mA (Note)
VCE=5V, IC=150mA (Note)
VCE=5V, IC=150mA (Note)
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE1
RANK
RANGE
B
60-120
C
100-200
MIN TYP MAX UNIT
180
V
120
V
160
5
V
10 μA
60
320
30
1
V
1.5 V
140
MHz
14
pF
D
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-005,J
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