2SD2454 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SD2454 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2454
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Base-emitter breakdown voltage
IE=400mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
ICBO
Collector cut-off current
VCB=1700V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
VF
Diode forward voltage
IF=7A
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=0.1A ; VCE=10V
Switching times : inductive load
ts
Storage time
tf
Fall time
ICP=6A;IB1=1A
fH =15.75kHz
MIN TYP. MAX UNIT
5
V
5
V
0.9
1.5
V
1.0
mA
66
200
µA
8
13
5
8
1.5
2.0
250
pF
1
3
MHz
9
12
µs
0.3
0.7
µs
2
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