D2331 Просмотр технического описания (PDF) - SavantIC Semiconductor
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D2331 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.8A
ICBO
Collector cut-off current
VCB=800V IE=0
hFE
DC current gain
fT
Transition frequency
VF
Diode forward voltage
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V
IF=3.5A
Product Specification
2SD2331
MIN TYP. MAX UNIT
5
V
3.0
5.0
V
1.5
V
10
µA
8
3
MHz
2.0
V
2
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