D2349 Просмотр технического описания (PDF) - Inchange Semiconductor
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D2349 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2349
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=300mA , IC=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A
VBEsat Base-emitter saturation voltage
IC=7A ;IB=1.4A
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
VF
Diode forward voltage
ts
Storage time
tf
Fall time
IF=7A
ICP=7A ;IB1=1.4A;fH=15.75kHz
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
1
mA
83
250 mA
10
6
9
1
3
MHz
170
pF
1.8
V
12 μs
0.7 μs
2
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