2SD2562 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD2562 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A ,IB= 10mA
ICBO
Collector Cutoff current
VCB= 150V, IE= 0
IEBO
Emitter Cutoff current
VEB= 5V, IC= 0
hFE
DC Current Gain
IC= 10A; VCE= 4V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
Switching Times
IE= 0; VCB= 10V; ftest= 1MHz
IE= -2A; VCE= 12V
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= 40V, RL= 4Ω,
IC= 10A; IB1= -IB2= 10mA
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
MIN TYP. MAX UNIT
150
V
2.5
V
3.0
V
0.1 mA
0.1 mA
5000
120
pF
70
MHz
0.8
μs
4.0
μs
1.2
μs
isc Website：www.iscsemi.cn
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