2SD2562 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD2562

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD2562

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 150V(Min)

·High DC Current Gain-

: hFE= 5000( Min.) @(IC= 10A, VCE= 4V)

·Low Collector Saturation Voltage-

: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA)

·Complement to Type 2SB1649

APPLICATIONS

·Designed for series regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

150

V

VCEO Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

1

A

85

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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