IRFD220 Просмотр технического описания (PDF) - Intersil
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IRFD220 Datasheet PDF : 6 Pages
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IRFD220
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
D
Junction Diode
G
MIN
TYP
MAX UNITS
-
-
0.8
A
-
-
6.4
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
TJ = 25oC, ISD = 0.8A, VGS = 0V (Figure 12)
-
trr
TJ = 150oC, ISD = 0.8A, dISD/dt = 100A/µs
-
QRR
TJ = 150oC, ISD = 0.8A, dISD/dt = 100A/µs
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature.
4. VDD = 25V, starting TJ = 25oC, L = 12.62mH, RG = 50Ω, peak IAS = 3.5A.
-
2.0
V
150
-
ns
0.6
-
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
1
10µs
100µs
1ms
10ms
0.1
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100ms
1s
TC = 25oC
TJ = MAX RATED
0.001
1
10
DC
102
103
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
10
VGS = 10V
VGS = 7V
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 6V
6
4
VGS = 5V
2
VGS = 4V
0
0
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
4-289
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