2SD2457 Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

2SD2457

NPN Transistors

KEXIN Industrial 

SMD Type

NPN Transistors

2SD2457

Transistors

■ Features

● High collector to emitter voltage VCEO.

● Large collector power dissipation PC.

● Complementary to 2SB1599

1.70 0.1

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

Rating

Unit

VCBO

50

VCEO

40

V

VEBO

5

IC

1.5

A

ICP

3

PC

1

W

TJ

150

℃

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= 1 mA， IE= 0

VCEO Ic= 2 mA， IB= 0

VEBO IE= 1 mA， IC= 0

ICBO VCB= 50 V , IE= 0

ICEO VCE= 40 V , IB= 0

IEBO VEB= 5V , IC=0

VCE(sat) IC=1.5 A, IB=150mA

VBE(sat) IC=2 A, IB=200mA

hFE VCE= 5V, IC= 1 A

Cob VCB=20V, IE=0, f=1MHz

fT VCE=5V,IE=-500mA,f=200MHz

Min Typ Max Unit

50

40

V

5

1

10 uA

0.1

1

V

1.5

80

220

45

pF

150

MHz

■ Classification of hfe

Type

Range

Marking

2SD2457-Q

80-160

1YQ

2SD2457-R

120-220

1YR

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