2SD2568 Просмотр технического описания (PDF) - ROHM Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SD2568 Datasheet PDF : 1 Pages
| |||
Transistors
Power Transistor(400V,0.5A)
2SD2568
2SD2568
!Features
1) High breakdown voltage.(BVCEO=400V)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
400
400
7
0.5
10
150
−55 ∼ +150
Unit
V
V
V
A
W(Tc=25°C)
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD2568
CPT3
PQ
TL
2500
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
400
400
7
−
−
−
−
82
−
−
Typ.
−
−
−
−
−
0.05
−
−
13.5
8
Max.
−
−
−
10
10
0.5
1.5
270
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 400V
VEB = 6V
IC = 100mA , IB = 10mA
IC = 100mA , IB = 10mA
VCE/IC = 5V/50mA
VCE = 5V , IE = −50mA , f = 10MHz
VCB = 10V , IE = 0A , f = 1MHz
Share Link: 