2SD2568(RevA) Просмотр технического описания (PDF) - ROHM Semiconductor
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производитель
2SD2568 Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristics curves
200
Ta=25 C
160
3.5mA 3.0mA2.5mA2.0mA
1.5mA
120
1.0mA
0.5mA
80
40
IB=0mA
0
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics
1
VCE=3V
0.5
0.2
0.1
0.05
0.02
0.01
0.005
Ta=100°C
25°C
−25°C
0.002
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter propagation
characteristics
2SD2568
1000
Ta=25 C
500
200
100
VCE=10V
50
5V
20
10
5
2
1
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain
vs. collector current ( Ι )
1000
500
200
100
50
Ta=100°C
25°C
−25°C
VCE=10V
20
10
5
2
1
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
10
Ta=25 C
5
2
IC/IB=20
1
10
0.5
0.2
5
0.1
0.05
0.02
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( Ι )
10
IC/IB=10
5
2
Ta= −25 C
25 C
1
100 C
VBE(sat)
0.5
0.2
Ta=100 C
0.1
25 C
−25 C
0.05
VCE(sat)
0.02
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
Base-emitter saturation voltage
vs. collector current
500
Ta=25 C
VCE=10V
200
100
50
20
10
5
2
1
−0.001
−0.005
−0.02 −0.1
−0.002
−0.01
−0.05 −0.2
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product
vs. emitter current
500
Ta=25 C
f=1MHz
200
IE=0A
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
Rev.A
2/2
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